AMO Scientific Lithium Tantalate Thin Film on Insulator (LTOI) Wafers

AMO Scientific Lithium Tantalate Thin Film on Insulator (LTOI) Wafers

$5,000.00
Sale price  $5,000.00 Regular price 
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AMO Scientific Lithium Tantalate Thin Film on Insulator (LTOI) Wafers

AMO Scientific Lithium Tantalate Thin Film on Insulator (LTOI) Wafers

$5,000.00
Sale price  $5,000.00 Regular price 

AMO Scientific Lithium Tantalate Thin Film on Insulator (LTOI) Wafers

Lithium Tantalate Thin Film on Insulator (LTOI) wafer is a layered semiconductor/photonics substrate that places a very thin single-crystal layer of lithium tantalate, LiTaO₃, on top of an insulating layer, usually SiO₂.

A typical structure is:

Thin-film LiTaO₃
↓
SiO₂ insulating layer
↓
Silicon or LiTaO₃ handle substrate

Bulk lithium tantalate has long been used for acoustic and electro-optic devices, but putting it into a sub-micron thin-film structure gives much stronger optical confinement. This makes it possible to fabricate compact waveguides, resonators, modulators, and other photonic integrated circuits. Recent wafer-scale research has demonstrated LTOI made by ion implantation/ion cutting followed by wafer bonding, similar in concept to SOI and LNOI manufacturing.

LTOI is particularly attractive because LiTaO₃ has:

  • Strong electro-optic/Pockels effect → useful for high-speed optical modulators.
  • Piezoelectric properties → useful for SAW/RF filters and acousto-optic devices.
  • Nonlinear optical properties → wavelength conversion, frequency combs, etc.
  • High optical-damage resistance and good thermal/bias stability relative to lithium niobate in some applications.
  • Potential for low-loss integrated photonics; recent work has demonstrated LTOI waveguides with losses well below 0.1 dB/cm.

This makes LTOI useful for devices such as:

  • High-speed electro-optic modulators
  • Photonic integrated circuits (PICs)
  • SAW/BAW and RF filters
  • Acousto-optic devices
  • Optical resonators
  • Nonlinear optics
  • Quantum photonics
  • Microwave-to-optical conversion
  • Optical signal processing

AMO Scientific can customize the LiTaO3 orientation/thin film thickness, SiO2 layer thickness and substrate material. Please contact us to discuss your need.

 Sample Wafer Specifications:

General Wafer
Structure LiTaO3 / Oxide / Si
Diameter Φ100 ± 0.2 mm
Thickness 525 ± 20 μm
Primary Flat Length 32.5 ± 2 mm
Wafer Beveling R Type
TTV < 10 μm
LTV < 1.5 μm (5∗5 mm2) / 95%
Bow ± 50 μm
Warp < 50 μm
Edge Exclusion 5 mm
Edge Trimming 2 ± 0.5 mm
Lithium Tantalate Layer
Average Thickness 600 ± 20 nm
Orientation X axis ± 0.3°
Primary Flat Perpendicular to +Z Axis ± 1°
Front Surface Roughness (Ra) < 0.5 nm
Defects

Within 150 total

Isolation SiO2 Layer
Thickness 4700 ± 100 nm
Uniformity <100nm @17 points
Substrate
Material Si
Resistivity > 10 kΩ·cm
Orientation <100> ± 1°
Primary Flat Orientation <110> ± 1°
Backside Etched

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