AMO Scientific Lithium Tantalate Thin Film on Insulator (LTOI) Wafers
AMO Scientific Lithium Tantalate Thin Film on Insulator (LTOI) Wafers
Lithium Tantalate Thin Film on Insulator (LTOI) wafer is a layered semiconductor/photonics substrate that places a very thin single-crystal layer of lithium tantalate, LiTaO₃, on top of an insulating layer, usually SiO₂.
A typical structure is:
Thin-film LiTaO₃
↓
SiO₂ insulating layer
↓
Silicon or LiTaO₃ handle substrate

Bulk lithium tantalate has long been used for acoustic and electro-optic devices, but putting it into a sub-micron thin-film structure gives much stronger optical confinement. This makes it possible to fabricate compact waveguides, resonators, modulators, and other photonic integrated circuits. Recent wafer-scale research has demonstrated LTOI made by ion implantation/ion cutting followed by wafer bonding, similar in concept to SOI and LNOI manufacturing.
LTOI is particularly attractive because LiTaO₃ has:
- Strong electro-optic/Pockels effect → useful for high-speed optical modulators.
- Piezoelectric properties → useful for SAW/RF filters and acousto-optic devices.
- Nonlinear optical properties → wavelength conversion, frequency combs, etc.
- High optical-damage resistance and good thermal/bias stability relative to lithium niobate in some applications.
- Potential for low-loss integrated photonics; recent work has demonstrated LTOI waveguides with losses well below 0.1 dB/cm.
This makes LTOI useful for devices such as:
- High-speed electro-optic modulators
- Photonic integrated circuits (PICs)
- SAW/BAW and RF filters
- Acousto-optic devices
- Optical resonators
- Nonlinear optics
- Quantum photonics
- Microwave-to-optical conversion
- Optical signal processing
AMO Scientific can customize the LiTaO3 orientation/thin film thickness, SiO2 layer thickness and substrate material. Please contact us to discuss your need.
Sample Wafer Specifications:
| General Wafer | |
| Structure | LiTaO3 / Oxide / Si |
| Diameter | Φ100 ± 0.2 mm |
| Thickness | 525 ± 20 μm |
| Primary Flat Length | 32.5 ± 2 mm |
| Wafer Beveling | R Type |
| TTV | < 10 μm |
| LTV | < 1.5 μm (5∗5 mm2) / 95% |
| Bow | ± 50 μm |
| Warp | < 50 μm |
| Edge Exclusion | 5 mm |
| Edge Trimming | 2 ± 0.5 mm |
| Lithium Tantalate Layer | |
| Average Thickness | 600 ± 20 nm |
| Orientation | X axis ± 0.3° |
| Primary Flat | Perpendicular to +Z Axis ± 1° |
| Front Surface Roughness (Ra) | < 0.5 nm |
| Defects |
Within 150 total |
| Isolation SiO2 Layer | |
| Thickness | 4700 ± 100 nm |
| Uniformity | <100nm @17 points |
| Substrate | |
| Material | Si |
| Resistivity | > 10 kΩ·cm |
| Orientation | <100> ± 1° |
| Primary Flat Orientation | <110> ± 1° |
| Backside | Etched |