AMO Scientific 4 inch C-Plane Sapphire Wafer

AMO Scientific 4 inch C-Plane Sapphire Wafer

SSP/650um
$82.00
Sale price  $82.00 Regular price  $91.95
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AMO Scientific 4 inch C-Plane Sapphire Wafer

AMO Scientific 4 inch C-Plane Sapphire Wafer

$82.00
Sale price  $82.00 Regular price  $91.95
Polishing/Thickness

AMO Scientific 4 inch C-Plane Sapphire Wafer

sapphire substrate is a thin, flat wafer made from synthetic sapphire, which is a single-crystal form of aluminum oxide (Al₂O₃). It has unique features such as:

  • Extremely hard (second only to diamond)
  • High thermal stability (can withstand very high temperatures)
  • Excellent electrical insulation
  • Optically transparent (from UV to infrared, depending on thickness)
  • Chemically inert (resistant to acids and harsh environments)

These properties make sapphire an ideal base material (“substrate”) for growing or supporting other materials.

AMO Scientific offers customized sapphire wafers. If you don't find the standard products work for your need, please feel free to reach us. 

Specifications:

Category Specification
Product SKU AMO-SA0107 (SSP), AMO-SA0108 (DSP)
Material High Purity >99.99%, single crystal Al₂O₃
Diameter 100.0 mm ± 0.10 mm
Thickness 650 µm ± 25 µm (SSP); 600 µm ± 25 µm (DSP), other thickness available upon request
Lattice Parameters a = 4.785 Å, c = 12.991 Å
Density 3.98 g/cm³
Orientation C-plane (0001) to M (1-100), 0.2° ± 0.1° off 
Primary Flat Orientation A-plane [11-20] ± 0.2°
Primary Flat Length 30.0 ± 1.0 mm
TTV (Total Thickness Variation) < 5 µm (SSP), ≤ 6 µm (DSP)
Bow -10 to 0 µm
Warp < 10 µm (SSP), ≤ 20 µm (DSP)
Thermal Expansion Coefficient 6.66 × 10⁻⁶ /°C (parallel to C-axis); 5 × 10⁻⁶ /°C (perpendicular)
Dielectric Strength 4.8 × 10⁵ V/cm
Dielectric Constant 11.5 (1 MHz, parallel to C-axis); 9.3 (1 MHz, perpendicular)
Dielectric Loss Tangent < 1 × 10⁻⁴
Thermal Conductivity 40 W/(m·K) at 20°C

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