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4 Inch C-Plane Sapphire Wafer – Single Crystal Al₂O₃, SSP/DSP
$82.00
Sale price
$82.00
Regular price
$91.95
4 Inch C-Plane Sapphire Wafer – Single Crystal Al₂O₃, SSP/DSP
AMO Scientific 4 Inch C-Plane Sapphire Wafers are high-purity (>99.99%) single-crystal Al₂O₃ substrates designed for semiconductor, thin-film, optical, and research applications.
The C-plane sapphire substrate offers excellent chemical stability, electrical insulation, mechanical hardness, thermal stability, and optical transparency.
Typical Applications
- Thin-film deposition
- Semiconductor research
- Epitaxial growth research
- Optical coatings
- LED and optoelectronic research
- MEMS and sensor research
- 2D material growth
- High-temperature research
- Optical substrate applications
AMO Scientific offers customized sapphire wafers. If you don't find the standard products work for your need, please feel free to reach us.
Specifications:
| Category | Specification |
|---|---|
| Product SKU | AMO-SA0107 (Single Side Polished, SSP), AMO-SA0108 (Double Sides Polished, DSP) |
| Material | High Purity >99.99%, single crystal Al₂O₃ |
| Diameter | 100.0 mm ± 0.10 mm |
| Thickness | 650 µm ± 25 µm (SSP); 600 µm ± 25 µm (DSP), other thickness available upon request |
| Lattice Parameters | a = 4.785 Å, c = 12.991 Å |
| Density | 3.98 g/cm³ |
| Orientation | C-plane (0001) to M (1-100), 0.2° ± 0.1° off |
| Primary Flat Orientation | A-plane [11-20] ± 0.2° |
| Primary Flat Length | 30.0 ± 1.0 mm |
| TTV (Total Thickness Variation) | < 5 µm (SSP), ≤ 6 µm (DSP) |
| Bow | -10 to 0 µm |
| Warp | < 10 µm (SSP), ≤ 20 µm (DSP) |
| Thermal Expansion Coefficient | 6.66 × 10⁻⁶ /°C (parallel to C-axis); 5 × 10⁻⁶ /°C (perpendicular) |
| Dielectric Strength | 4.8 × 10⁵ V/cm |
| Dielectric Constant | 11.5 (1 MHz, parallel to C-axis); 9.3 (1 MHz, perpendicular) |
| Dielectric Loss Tangent | < 1 × 10⁻⁴ |
| Thermal Conductivity | 40 W/(m·K) at 20°C |