4 Inch C-Plane Sapphire Wafer – Single Crystal Al₂O₃, SSP/DSP

4 Inch C-Plane Sapphire Wafer – Single Crystal Al₂O₃, SSP/DSP

Single Side Polished (SSP)/650um
$82.00
Sale price  $82.00 Regular price  $91.95
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4 Inch C-Plane Sapphire Wafer – Single Crystal Al₂O₃, SSP/DSP

4 Inch C-Plane Sapphire Wafer – Single Crystal Al₂O₃, SSP/DSP

$82.00
Sale price  $82.00 Regular price  $91.95
Polishing/Thickness

4 Inch C-Plane Sapphire Wafer – Single Crystal Al₂O₃, SSP/DSP

AMO Scientific 4 Inch C-Plane Sapphire Wafers are high-purity (>99.99%) single-crystal Al₂O₃ substrates designed for semiconductor, thin-film, optical, and research applications. 

The C-plane sapphire substrate offers excellent chemical stability, electrical insulation, mechanical hardness, thermal stability, and optical transparency.

Typical Applications

  • Thin-film deposition
  • Semiconductor research
  • Epitaxial growth research
  • Optical coatings
  • LED and optoelectronic research
  • MEMS and sensor research
  • 2D material growth
  • High-temperature research
  • Optical substrate applications

AMO Scientific offers customized sapphire wafers. If you don't find the standard products work for your need, please feel free to reach us. 

Specifications:

Category Specification
Product SKU AMO-SA0107 (Single Side Polished, SSP), AMO-SA0108 (Double Sides Polished, DSP)
Material High Purity >99.99%, single crystal Al₂O₃
Diameter 100.0 mm ± 0.10 mm
Thickness 650 µm ± 25 µm (SSP); 600 µm ± 25 µm (DSP), other thickness available upon request
Lattice Parameters a = 4.785 Å, c = 12.991 Å
Density 3.98 g/cm³
Orientation C-plane (0001) to M (1-100), 0.2° ± 0.1° off 
Primary Flat Orientation A-plane [11-20] ± 0.2°
Primary Flat Length 30.0 ± 1.0 mm
TTV (Total Thickness Variation) < 5 µm (SSP), ≤ 6 µm (DSP)
Bow -10 to 0 µm
Warp < 10 µm (SSP), ≤ 20 µm (DSP)
Thermal Expansion Coefficient 6.66 × 10⁻⁶ /°C (parallel to C-axis); 5 × 10⁻⁶ /°C (perpendicular)
Dielectric Strength 4.8 × 10⁵ V/cm
Dielectric Constant 11.5 (1 MHz, parallel to C-axis); 9.3 (1 MHz, perpendicular)
Dielectric Loss Tangent < 1 × 10⁻⁴
Thermal Conductivity 40 W/(m·K) at 20°C

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