AMO Scientific 2 Inch C-Plane Sapphire Wafer (0001) – Single Crystal Al₂O₃, SSP/DSP
AMO Scientific 2 Inch C-Plane Sapphire Wafer (0001) – Single Crystal Al₂O₃, SSP/DSP
AMO Scientific 2 Inch C-Plane Sapphire Wafer (0001) – Single Crystal Al₂O₃, SSP/DSP
AMO Scientific 2 Inch C-Plane Sapphire Wafers are high-purity single-crystal Al₂O₃ substrates with a nominal diameter of 50.8 mm and C-plane (0001) crystal orientation. Available in both single-side polished (SSP) and double-side polished (DSP) configurations, these sapphire wafers are suitable for semiconductor research, thin-film deposition, optical applications, material research, and other laboratory processes.
Standard options include 430 ± 25 µm SSP and 400 ± 25 µm DSP wafers. The C-plane sapphire substrate combines high mechanical hardness, chemical stability, electrical insulation, optical transparency, and thermal stability. Custom thicknesses and specifications are available upon request.
Typical Applications
- Thin-film deposition
- Semiconductor research
- Epitaxial growth research
- Optical coatings
- LED and optoelectronic research
- MEMS and sensor research
- 2D material growth
- High-temperature research
- Optical substrate applications
AMO Scientific offers customized sapphire wafers. If you don't find the standard products work for your need, please feel free to reach us.
Specifications:
| Category | Specification |
|---|---|
| Product SKU | AMO-SA0101 (Single Side polished, SSP), AMO-SA0102 (Double Sides Polished, DSP 400 µm) |
| Material | High Purity >99.99%, single crystal Al₂O₃ |
| Diameter | 50.80 mm ± 0.10 mm |
| Thickness | 430 µm ± 25 µm (SSP); 400 µm ± 25 µm (DSP), other thickness available upon request |
| Lattice Parameters | a = 4.785 Å, c = 12.991 Å |
| Density | 3.98 g/cm³ |
| Orientation | C-plane (0001) to M (1-100), 0.2° ± 0.1° off |
| Primary Flat Orientation | A-plane [11-20] ± 0.2° |
| Primary Flat Length | 16.0 ± 1.0 mm |
| TTV (Total Thickness Variation) | < 5 µm (SSP), ≤ 6 µm (DSP) |
| Bow | -10 to 0 µm |
| Warp | < 10 µm (SSP), ≤ 20 µm (DSP) |
| Thermal Expansion Coefficient | 6.66 × 10⁻⁶ /°C (parallel to C-axis); 5 × 10⁻⁶ /°C (perpendicular) |
| Dielectric Strength | 4.8 × 10⁵ V/cm |
| Dielectric Constant | 11.5 (1 MHz, parallel to C-axis); 9.3 (1 MHz, perpendicular) |
| Dielectric Loss Tangent | < 1 × 10⁻⁴ |
| Thermal Conductivity | 40 W/(m·K) at 20°C |