2 Inch N-Type 4H-SiC Wafer
AMO Scientific offers 2 inch / 50.8 mm N-type 4H silicon carbide (4H-SiC) wafers for semiconductor research, epitaxial growth, power electronics, RF devices, and high-temperature applications.
These nitrogen-doped 4H-SiC substrates are available in production and dummy grades with a standard thickness of 330 ± 25 µm. The N-type wafers feature electrical resistivity of 0.012–0.028 Ω·cm and are available with a 4° off-axis orientation toward <11-20>.
Key Features
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2 inch / 50.8 mm 4H-SiC wafer
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N-type conductivity
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Nitrogen doped
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330 ± 25 µm thickness
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4° off-axis toward <11-20>
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Resistivity: 0.012–0.028 Ω·cm
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Si-face CMP surface
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C-face optical polish
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Production and dummy grades available
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Custom SiC wafer specifications available
Applications
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Power MOSFETs
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Schottky barrier diodes
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Power modules
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EV power electronics
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Fast charging systems
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Solar inverters
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RF and microwave devices
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High-temperature electronics
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SiC epitaxial growth
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Semiconductor research
Specifications
| Specification | Details |
|---|---|
| Material | 4H Silicon Carbide (4H-SiC) |
| Conductivity Type | N-Type |
| Dopant | Nitrogen |
| Diameter | 50.8 ± 0.38 mm |
| Thickness | 330 ± 25 µm |
| Wafer Orientation | 4° off-axis toward <11-20> ± 0.5° |
| Electrical Resistivity | 0.012–0.028 Ω·cm |
| Production Grade MPD | ≤ 2 cm⁻² |
| Dummy Grade MPD | ≤ 50 cm⁻² |
| Primary Flat | {10-10} ± 5.0° |
| Primary Flat Length | 16.0 ± 1.7 mm |
| Secondary Flat Length | 8.0 ± 1.7 mm |
| Secondary Flat Orientation | 90° CW from primary flat ± 5.0° |
| Edge Exclusion | 1 mm |
| C-Face Surface | Optical polish, Ra < 1 nm |
| Si-Face Surface | CMP, Ra < 0.5 nm |
Custom Silicon Carbide Wafers
AMO Scientific can provide customized SiC wafers with different diameters, conductivity types, orientations, thicknesses, grades, and polishing specifications.
Please contact us with your required SiC wafer specifications.