AMO Scientific Lithium Niobate Thin Film on Insulator (LNOI) Wafers
AMO Scientific Lithium Niobate Thin Film on Insulator (LNOI) Wafers
AMO Scientific Lithium Niobate Thin Film on Insulator (LNOI) Wafers
Lithium Niobate Thin Film on Insulator wafers (LNOI) are engineered wafers made by placing a very thin single-crystal lithium niobate (LiNbO₃, LN) layer on top of an insulating layer, usually silicon dioxide (SiO₂), supported by a thicker substrate.
A typical structure is:
Why LNOI is important
Bulk lithium niobate has been widely used in optics because it has strong electro-optic, nonlinear optical, piezoelectric, and acousto-optic properties. The thin-film-on-insulator structure adds strong optical confinement, allowing very small photonic devices to be fabricated.
This makes LNOI useful for devices such as:
- Optical modulators — especially high-speed electro-optic modulators
- Photonic integrated circuits (PICs)
- Optical waveguides
- Microring resonators
- Frequency converters
- Second-harmonic generation
- Quantum photonics
- SAW / acoustic devices
- Microwave photonics
AMO Scientific can customize the LiNbO3 orientation/thin film thickness, SiO2 layer thickness and substrate material. Please contact us to discuss your need.
Sample Wafer Specifications:
| General Wafer | |
| Structure | LiNbO3/ Oxide / Si |
| Diameter | Φ100 ± 0.2 mm |
| Thickness | 525 ± 25 μm |
| Primary Flat Length | 32.5 ± 2 mm |
| Wafer Beveling | R Type |
| TTV | < 10 μm |
| LTV | < 1.5 μm (5∗5 mm2) / 95% |
| Bow | ± 50 μm |
| Warp | < 50 μm |
| Edge Trimming | 2 ± 0.5 mm |
| Lithium Niobate Layer | |
| Average Thickness |
300~900nm (customizable) |
| Orientation | X axis ± 0.5° |
| Primary Flat Orientation | Z axis ± 1° |
| Front Surface Roughness (Ra) | < 1 nm |
| Bond Defects | > 1 mm None ; ≦ 1 mm within 80 total |
| Front Surface Scratch |
> 1 cm None ; ≦ 1 cm within 3 total |
| Oxide Layer | |
| Thickness | 4700 ± 150 nm |
| Uniformity | ± 5% |
| Substrate | |
| Material | Si |
| Orientation | <100> ± 1° |
| Primary Flat Orientation | <110> ± 1° |
| Resistivity | > 10 kΩ·cm |
| Backside | Etched |